Band-gap engineering and ballistic transport in edge-corrugated graphene nanoribbons
نویسندگان
چکیده
منابع مشابه
Energy band-gap engineering of graphene nanoribbons.
We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurem...
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Graphene, a recently discovered form of carbon, has received much attention over the past few years due to its excellent electrical, optical, and thermal properties [1]. With an extraordinary carrier mobility and high current density [2], graphene's application in electronic devices is promising. As a zero bandgap material, pristine graphene cannot be used as a semi-conducting channel in transi...
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Graphene nanoribbons are essential components in future graphene nanoelectronics. However, in typical nanoribbons produced from lithographically patterned exfoliated graphene, the charge carriers travel only about 10 nanometers between scattering events, resulting in minimum sheet resistances of about 1 kW In contrast 40 nm wide graphene nanoribbons that are epitaxially grown on silicon carbide...
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We study the coherent spin-polarized transport through a zigzag-edge graphene flake (ZGF), using Hubbard model in the nearest neighbor approximation within the framework of the Green function’s technique and Landauer formalism. The system considered consists of electrode/ (ZGF)/electrode, in which the electrodes are chosen to be armchair nanoribbons. The study was performed for two types of ele...
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Silicon-based field-effect transistors (FETs) are the building blocks of modern digital logic circuitry and therefore part of virtually every electronic device available today. Over the past decades, continuous downscaling of existing designs has met the rising performance requirements, but as the size of FETs approaches the regime of atomic structures, new concepts are required to maintain the...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2009
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.80.155415